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STW4N150
+BOMMOSFET N-CH 1500V 4A TO247-3
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STW4N150
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데이터시트 STW4N150 DataSheet
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패키지 TO-247
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사양
| 속성 | 가치 |
| Package | Tube |
| Series | PowerMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1500 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
The MOSFET is part of the ST's MDmesh™ series, known for their reduced gate charge and optimized switching performance. This makes the STW4N150 ideal for applications such as high-voltage power supplies, lighting systems, and motor drives where efficient energy use and reliable performance are critical.
Additionally, the STW4N150 is encapsulated in a TO-247 package, which provides good thermal performance, making it suitable for applications where heat dissipation is crucial. Its robust design and high-speed switching capabilities make it a preferred choice in industrial and consumer electronics requiring high power and efficiency.
Equivalent
1. IRFP150 - Offers similar power handling and voltage characteristics.
2. FQA9N90C - A comparable choice with similar features.
3. BUZ90A - Matches in terms of voltage and current capacity.
4. 2SK3568 - Provides equivalent functionality.
Always verify the specifications and pin configurations before substituting to ensure compatibility with your application.
Features
1. Voltage and Current Ratings: It is rated for 1500V drain-source voltage (V_DS) and typically supports a drain current (I_D) of up to 4A.
2. R_DS(on): The on-resistance is relatively low, contributing to efficient power handling and minimized energy loss during operation.
3. Package Type: It is available in a TO-247 package, which is suitable for high-power applications due to its ability to dissipate heat effectively.
4. High-Speed Switching: This MOSFET features fast switching capabilities, making it suitable for applications requiring quick response times.
5. Avalanche Ruggedness: It offers robust performance in avalanche conditions, enhancing reliability under demanding operational scenarios.
6. Applications: Commonly used in power supplies, motor drives, lighting systems, and other high-voltage applications.
7. Thermal Performance: It includes features to handle significant power dissipation, supported by the package design and material.
These characteristics make the STW4N150 a versatile choice for designers looking for a reliable high-voltage switching solution.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the main terminal for the current flow. In a power circuit, it is usually connected to the load.
3. Source (S): This pin is connected to the ground or the return path of the circuit.
The STW4N150 is characterized by its capability to handle high voltages, up to 1500V, making it suitable for applications like power supplies, converters, and other high-voltage circuits. Its design is optimized for fast switching and low on-resistance, which helps in improving the efficiency of power systems.
Manufacturer
Application
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Employed in motor drivers for industrial and consumer electronics.
3. Lighting Systems: Utilized in LED drivers and other lighting controls for energy-efficient performance.
4. Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS).
5. Amplifiers: Applied in audio and RF amplifiers for enhanced performance.
These applications benefit from the MOSFET's ability to handle high voltage and high-speed switching.