사양
| 속성 | 가치 |
| Package | Tube |
| Series | FDmesh™ II |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 51A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 25.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 190 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 5800 pF @ 50 V |
| PowerDissipation(Max) | 350W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
The STW55NM60ND is an N-channel power MOSFET from STMicroelectronics, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 600V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): 45mΩ (max)
- Fast Switching: Optimized for high-speed operation
- Package: TO-247 (3-pin), ensuring robust thermal performance
Ideal for power supplies, motor drives, and inverters, it offers low conduction losses and high reliability. The device includes an intrinsic body diode for inductive load protection.
For detailed specs, refer to the datasheet on STMicroelectronics' website.
- Voltage Rating: 600V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): 45mΩ (max)
- Fast Switching: Optimized for high-speed operation
- Package: TO-247 (3-pin), ensuring robust thermal performance
Ideal for power supplies, motor drives, and inverters, it offers low conduction losses and high reliability. The device includes an intrinsic body diode for inductive load protection.
For detailed specs, refer to the datasheet on STMicroelectronics' website.
Pinout
The STW55NM60ND is a Power MOSFET with the following key specifications:
- Pin Count: 3 pins (TO-247 package)
- Function:
- Drain (D): High-voltage power terminal.
- Gate (G): Control terminal (voltage-driven).
- Source (S): Common/ground terminal.
- Key Features:
- 600V drain-source voltage (VDSS).
- 55A continuous drain current (ID).
- Low on-resistance (RDS(on)).
- Designed for high-power switching (e.g., inverters, motor drives).
This MOSFET is optimized for efficiency in high-voltage applications.
- Pin Count: 3 pins (TO-247 package)
- Function:
- Drain (D): High-voltage power terminal.
- Gate (G): Control terminal (voltage-driven).
- Source (S): Common/ground terminal.
- Key Features:
- 600V drain-source voltage (VDSS).
- 55A continuous drain current (ID).
- Low on-resistance (RDS(on)).
- Designed for high-power switching (e.g., inverters, motor drives).
This MOSFET is optimized for efficiency in high-voltage applications.
Manufacturer
The STW55NM60ND is a power MOSFET manufactured by STMicroelectronics, a leading global semiconductor company based in Switzerland.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs, serving industries like automotive, industrial, and consumer electronics. The company is known for its innovation in energy-efficient and high-performance electronic components.
The STW55NM60ND is a 600V, 55A MOSFET designed for high-power applications such as motor drives, inverters, and power supplies.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs, serving industries like automotive, industrial, and consumer electronics. The company is known for its innovation in energy-efficient and high-performance electronic components.
The STW55NM60ND is a 600V, 55A MOSFET designed for high-power applications such as motor drives, inverters, and power supplies.
Package
The STW55NM60ND is a power MOSFET housed in a TO-247 package. This package type is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. It offers excellent thermal performance and is commonly used in switching power supplies, motor drives, and inverters.
