이미지는 참조용입니다.
STW88N65M5
+BOMMOSFET N-CH 650V 84A TO247-3
-
제조업체ST마이크로일렉트로닉스(주)
-
제조업체 부품 #STW88N65M5
-
데이터시트 STW88N65M5 DataSheet
-
패키지 TO-247
-
재고6943
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 84A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 29mOhm @ 42A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 204 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 8825 pF @ 100 V |
| PowerDissipation(Max) | 450W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
It is commonly used in power supply designs, including resonant and hard-switching topologies, due to its fast switching capabilities and reduced energy loss. The device is built using advanced super-junction technology, which allows it to achieve higher power density and efficiency. It is typically packaged in a TO-247 format, providing good thermal performance and ease of integration into various systems. This makes the STW88N65M5 a popular choice for designers looking to optimize power circuits in industrial, automotive, and consumer electronics applications.
Equivalent
1. Infineon IPW68R045C7: A CoolMOS™ C7 series with similar voltage and current ratings.
2. ON Semiconductor FDPF88N65: A similar N-channel MOSFET.
3. Vishay SiHH26N65E: A similar device in terms of voltage and current capacity.
4. Fairchild FCH88N65F: Another comparable option with similar specifications.
Ensure to check the datasheets for detailed specification matching.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 650V, making it suitable for high-voltage applications, and a continuous drain current (I_D) rating of approximately 88A.
2. R_DS(on) Value: The MOSFET boasts a low on-resistance (R_DS(on)) of 0.026 ohms, which helps reduce power loss and improve efficiency in power conversion applications.
3. Technology: It is built using STMicroelectronics' advanced MDmesh™ M5 technology, which enhances its performance in terms of switching speed and efficiency.
4. Package: The device is typically available in a TO-247 package, which provides good thermal performance and is suitable for through-hole mounting in power electronics applications.
5. Applications: It is ideal for use in applications such as power supplies, converters, and motor control, where high efficiency and reliability are critical.
These features make the STW88N65M5 a suitable choice for demanding power management and conversion tasks.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off, allowing or blocking current flow between the drain and source.
2. Drain (D): This is the pin through which the current flows from the drain to the source when the MOSFET is in the 'on' state. It's typically connected to the load.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It is connected to the ground or the negative side of the supply in most applications.
The STW88N65M5 is designed for high-efficiency applications and features low on-resistance, making it suitable for power management, switching, and amplification in various electronic circuits.
Manufacturer
Application
1. Switched-Mode Power Supplies (SMPS): Utilized for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive environments.
3. DC-DC Converters: Used in converting voltage levels in electronic devices.
4. Uninterruptible Power Supplies (UPS): Ensures consistent power delivery.
5. Renewable Energy Systems: Supports solar inverters and other renewable applications.
6. Lighting Applications: Used in LED drivers and other lighting solutions.
These applications leverage the MOSFET's high efficiency, fast switching capabilities, and robust performance in high-power scenarios.