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MOSFET P-CH 60V 110A TO263
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제조업체실리콘 닉스
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제조업체 부품 #SUM110P06-08L-E3
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패키지 D2PAK-3
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재고1902
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 110A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 8mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 240 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 9200 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 272W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D²Pak) |
개요
Equivalent
- IRF9Z34N (Vishay)
- FQP27P06 (Fairchild/ON Semi)
- STP27P6F6 (STMicroelectronics)
- AOD4185 (Alpha & Omega)
These alternatives offer similar specifications (e.g., -60V, -110A, RDS(on) ~8mΩ). Verify compatibility for your application.
Features
- Voltage Rating: -60V (Drain-Source)
- Current Capacity: -110A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 8.0mΩ (max) @ VGS = -10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-263 (D2PAK), suitable for surface mounting
- Low Gate Charge (Qg): Enhances switching efficiency
- Avalanche Energy Rated: Improves reliability in rugged conditions
Ideal for power management in DC-DC converters, motor control, and battery protection circuits.
Pinout
Key Functions:
- Pins 1-3 (Drain): High-current drain connection (internally connected).
- Pin 4 (Gate): Controls switching (voltage-driven).
- Pin 5-8 (Source): Common source connection (internally tied).
Features:
- 60V Drain-Source Voltage (VDS)
- 110A Continuous Drain Current (ID)
- Low RDS(on) for high efficiency.
Used in power switching applications like motor drives and DC-DC converters.
