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TC58CVG1S3HRAIG
+BOMIC FLASH 2GBIT SPI 104MHZ 8WSON
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제조업체Kioxia 미국 주식회사.
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제조업체 부품 #TC58CVG1S3HRAIG
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재고4424
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | SPI |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (6x8) |
| Base Product Number | TC58CVG1 |
| Clock Frequency | 104 MHz |
개요
Description
This component features a Serial Interface and supports various data speeds, making it suitable for applications requiring fast read and write capabilities. It offers notable endurance and reliability, which are essential for devices that handle intensive data operations. With its compact form factor, the TC58CVG1S3HRAIG is ideal for space-constrained environments.
Overall, this NAND flash memory solution is engineered to meet the growing demands for storage in a variety of modern applications, providing efficient performance, durability, and increased storage capacity.
Equivalent
Features
1. 3D NAND Technology: Utilizes advanced 3D stacking to enhance density and performance.
2. High Storage Capacity: Offers large storage options, suitable for mobile devices and consumer electronics.
3. Fast Data Transfer Rates: Supports high-speed interfaces, enabling rapid read and write operations.
4. Low Power Consumption: Designed for energy efficiency, making it ideal for battery-powered devices.
5. Enhanced Endurance and Reliability: Built to withstand numerous write cycles, ensuring longevity and data integrity.
6. Multi-Level Cell (MLC): Capable of storing multiple bits per cell, optimizing storage efficiency.
7. Wide Operating Temperature Range: Supports various applications in diverse environmental conditions.
These features make the TC58CVG1S3HRAIG suitable for a range of applications, including smartphones, tablets, SSDs, and other electronic devices.
Pinout
- Power Pins: VCC (power supply) and VSS (ground).
- Data Lines: DQ0 to DQ7 for data input and output.
- Control Pins: CE# (Chip Enable), RE# (Read Enable), WE# (Write Enable), and WP# (Write Protect).
- Clock Pins: CLK for clock signal input.
- Status Pins: Ready/Busy signals to indicate operation status.
This architecture allows for efficient memory operations, making it suitable for various applications, including mobile devices and embedded systems. Always refer to the specific datasheet for detailed pinout and function descriptions.