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TPS2814DR
+BOMIC GATE DRVR LOW-SIDE 8SOIC
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제조업체텍사스 인스트루먼트(주)
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제조업체 부품 #TPS2814DR
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데이터시트 TPS2814DR DataSheet
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재고9360
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사양
| 속성 | 가치 |
| PartStatus | Active |
| DigiKeyProgrammable | Not Verified |
| DrivenConfiguration | Low-Side |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | MOSFET (N-Channel) |
| Voltage-Supply | 4V ~ 14V |
| LogicVoltage-VIL,VIH | 1V, 4V |
| Current-PeakOutput(Source,Sink) | 2A, 2A |
| InputType | Inverting, Non-Inverting |
| Rise/FallTime(Typ) | 14ns, 15ns |
| OperatingTemperature | -40°C ~ 125°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SOIC |
| BaseProductNumber | TPS2814 |
개요
Description
Key features include operational capabilities of up to 1.5A output current, fast rise and fall times, and a wide supply voltage range from 4.5V to 15V, ensuring compatibility with different gate drive requirements. The device also incorporates features like under-voltage lockout (UVLO) to protect against low supply voltages and Adjustable dead time to optimize switching performance.
Additionally, its compact package (SOT-23) facilitates integration into space-constrained designs. The TPS2814DR is widely used in applications that require efficient switching and precise control, making it a reliable choice for engineers looking to enhance the performance of power electronic systems.
Equivalent
Features
1. Dual Output: It can drive two N-channel MOSFETs or IGBTs, making it suitable for half-bridge applications.
2. High Drive Capability: It provides a peak output current of up to 2A, ensuring fast switching times.
3. Wide Supply Voltage: The device operates over a voltage range of 10V to 20V, accommodating various power supply requirements.
4. Enhanced Switching Performance: The driver features adjustable rise and fall times for optimized switching behavior, reducing electromagnetic interference (EMI).
5. Integrated Bootstrap: It includes a bootstrap capacitor for high-side gate drive, facilitating the control of high-side switches in half-bridge configurations.
6. Protection Features: The TPS2814DR incorporates under-voltage lockout (UVLO), ensuring safe operation by preventing driver activation under insufficient supply voltage.
7. Thermal Protection: Built-in thermal shutdown helps safeguard the device against overheating.
Overall, the TPS2814DR is well-suited for motor drives, power converters, and other applications requiring efficient MOSFET control.
Pinout
1. IN (1, 2): Input signals for controlling the gate outputs.
2. GND: Ground reference for the device.
3. OUT (3, 6): Outputs that drive the gates of the external MOSFETs.
4. VCC: Supply voltage for the driver, typically ranging from 4.5V to 15V.
5. VS (4, 5): Source pins connected to the source of the MOSFETs, providing the necessary voltage for gate driving.
The TPS2814DR is designed for fast switching performance, low propagation delay, and features such as shoot-through protection. This makes it suitable for applications in DC-DC converters and motor drives.
Manufacturer
Application
1. Power Supply Circuits: Enhances efficiency in switch-mode power supplies (SMPS).
2. DC-DC Converters: Drives high-side and low-side MOSFETs in synchronous converters.
3. Motor Drives: Supports brushless DC motor control and inverters.
4. Class D Amplifiers: Ensures efficient switching in audio amplification.
5. LED Drivers: Manages high-current LED lighting systems.
6. Switching Regulators: Facilitates fast switching for improved performance.
7. Renewable Energy Systems: Used in solar inverters and battery management.
Its features enable high-speed operation and robust performance in demanding applications.