Part A
2N7002LT1G
온세미
- Lifecycle
- Active
- Stock
- 7047 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Replacement verdict
Compatible functional replacement candidate
The 2N7002-7-F and 2N7002LT1G are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making them viable functional substitutes in most low-power switching applications. Designers should verify gate threshold tolerances and thermal derating for their specific circuit conditions before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002-7-F
다이오즈(주)
- Lifecycle
- Active
- Stock
- 5757 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002-7-F | 2N7002LT1G | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed circuit rail voltage for safe operation. |
| Continuous Drain Current (Id) | 115 mA | 115 mA | Determines the maximum load current the MOSFET can carry continuously without damage. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω @ Vgs=10V, Id=50mA | 7.5 Ω @ Vgs=10V, Id=50mA | Lower on-resistance reduces conduction losses and heat generation in switching applications. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Defines the gate voltage needed to turn on the device; critical for logic-level compatibility. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (Pd) | 200 mW | 225 mW | Maximum power the package can dissipate; affects thermal design and continuous current capability. |
| Package / Mounting | SOT-23, Surface Mount | SOT-23, Surface Mount | Physical footprint and assembly method must match the PCB layout for direct drop-in replacement. |
| Input Capacitance (Ciss) | 50 pF (typ) | 50 pF (typ) | Affects switching speed and gate drive requirements; higher capacitance slows transitions. |
| Manufacturer | Diodes Incorporated | onsemi | Different manufacturers may have subtle process variations affecting reliability and second-source qualification. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002LT1G | 2N7002-7-F |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 115mA (Tc) | 115mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 7.5Ohm @ 500mA, 10V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 225mW (Ta) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the 2N7002-7-F and the 2N7002LT1G?
The 2N7002-7-F is a 60 V N-channel enhancement mode MOSFET in a SOT-23 package from Diodes Incorporated, while the 2N7002LT1G is a 60 V N-channel enhancement mode MOSFET in a SOT-23 package from onsemi. Both share the same basic electrical ratings, but they differ in manufacturer, continuous drain current rating, and RDS(on) specifications.
Are the 2N7002-7-F and 2N7002LT1G pin-compatible?
Yes. Both devices use the standard SOT-23 (TO-236) package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This allows them to be used interchangeably on the same PCB footprint.
What is the continuous drain current rating for each device?
The 2N7002-7-F from Diodes Incorporated is rated for 115 mA continuous drain current at 25°C. The 2N7002LT1G from onsemi is rated for 115 mA continuous drain current at 25°C. Both devices share the same current rating.
What is the drain-source voltage rating for both MOSFETs?
Both the 2N7002-7-F and the 2N7002LT1G have a maximum drain-source voltage (VDS) rating of 60 V. This makes them suitable for low-voltage switching applications up to 60 V.
How do the RDS(on) specifications compare between the two parts?
The 2N7002-7-F specifies RDS(on) of 1.6 Ω typical and 5 Ω maximum at VGS = 10 V, and 2.8 Ω typical at VGS = 4.5 V. The 2N7002LT1G specifies RDS(on) of 1.6 Ω typical and 5 Ω maximum at VGS = 10 V, and 2.8 Ω typical at VGS = 4.5 V. The RDS(on) specifications are equivalent between the two devices.
What are the gate threshold voltage ranges for these MOSFETs?
The 2N7002-7-F has a gate threshold voltage (VGS(th)) range of 1.0 V minimum to 2.5 V maximum at VDS = VGS and ID = 250 µA. The 2N7002LT1G has a gate threshold voltage range of 1.0 V minimum to 2.5 V maximum at VDS = VGS and ID = 250 µA. Both devices share the same threshold voltage range.
Can the 2N7002-7-F and 2N7002LT1G be used as direct substitutes for each other?
Yes, in most applications they can be considered direct substitutes because they share the same package, pinout, voltage rating, current rating, threshold voltage range, and RDS(on) characteristics. However, designers should verify the specific datasheet parameters for their application, including thermal characteristics and switching performance, before finalizing a substitution.
What are the typical applications for the 2N7002-7-F and 2N7002LT1G?
Both MOSFETs are commonly used for low-voltage, low-current switching applications such as level shifting, load switching, relay drivers, and small signal amplification. Their 60 V rating and 115 mA current capability make them suitable for portable electronics, consumer devices, and industrial control circuits.