Part A
2N7002
ST마이크로일렉트로닉스(주)
- Lifecycle
- Active
- Stock
- 1470 PCS
- Package
- SOT-23
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Replacement verdict
Compatible functional replacement candidate
The 2N7002DW is a dual-channel version of the single 2N7002 N-channel MOSFET. While both share identical electrical characteristics per channel, the 2N7002DW integrates two isolated MOSFETs in one package, making it a functional replacement candidate only when the application requires two independent switching channels or can accommodate the dual-die footprint. Designers must verify PCB layout compatibility and thermal considerations before substituting.
Channel Configuration
High match
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
Validation required
Parts at a glance
Part B
2N7002DW
온세미
- Lifecycle
- Active
- Stock
- 6631 PCS
- Series
- 트랜지스터-FET, MOSFET-FET, MOSFET 어레이
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7002 | Why it matters |
|---|---|---|---|
| Channel Configuration | Dual N-Channel (two independent MOSFETs) | Single N-Channel | Determines how many independent switching elements are available in one package, directly affecting circuit topology and board space. |
| Package / Mounting | SOT-363 (SC-88, 6-pin, surface mount) | SOT-23 (TO-236, 3-pin, surface mount) | Footprint and pin count must match the PCB layout; a different package cannot be dropped in without a board redesign. |
| Drain-Source Voltage (VDS) | 60 V | 60 V | Sets the maximum voltage the device can block; must exceed the application's peak drain-source voltage with margin. |
| Continuous Drain Current (ID) | 115 mA (per channel) | 115 mA | Defines the maximum steady-state current the MOSFET can carry; exceeding it risks overheating and failure. |
| Drain-Source On-Resistance (RDS(on)) | 7.5 Ω max at VGS = 10 V, ID = 500 mA | 7.5 Ω max at VGS = 10 V, ID = 500 mA | Determines conduction losses and voltage drop when the device is on; lower values improve efficiency. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V min / 2.5 V max at VDS = VGS, ID = 250 µA | 1.0 V min / 2.5 V max at VDS = VGS, ID = 250 µA | Indicates the gate voltage needed to start conduction; critical for compatibility with logic-level drive signals. |
| Gate-Source Voltage (VGS) Max | ±20 V | ±20 V | Limits the maximum gate drive voltage; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (PD) | 200 mW (per channel) | 200 mW | Sets the thermal limit for the device; must be derated based on ambient temperature and PCB thermal design. |
| Input Capacitance (Ciss) | 50 pF typ at VDS = 25 V, VGS = 0 V, f = 1 MHz | 50 pF typ at VDS = 25 V, VGS = 0 V, f = 1 MHz | Affects switching speed and gate drive requirements; higher capacitance slows transitions and increases drive losses. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002 | 2N7002DW |
|---|---|---|
| Series | STripFET™ | - |
| Part Status | Obsolete | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Tc) | - |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | - |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | - |
| Vgs(th)(Max) @ Id | 3V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 2 nC @ 5 V | - |
| Vgs(Max) | ±18V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 43 pF @ 25 V | - |
| Power Dissipation (Max) | 350mW (Tc) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | - | 2N7002 |
| Configuration | - | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Current - Continuous Drain (Id) @ 25°C | - | 115mA |
| Rds On (Max) @ Id, Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | - | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 50pF @ 25V |
| Power - Max | - | 200mW |
| Packaging | - | Cut Tape (CT), Tape & Reel (TR) |
Frequently asked questions
What is the main difference between the 2N7002DW and the 2N7002?
The 2N7002DW is a dual N-channel MOSFET containing two electrically isolated 2N7002-type dies in a single package, while the 2N7002 is a single N-channel MOSFET in a discrete package. The 2N7002DW is typically supplied in a 6-pin SOT-363 (SC-70) package, whereas the 2N7002 is commonly supplied in a 3-pin SOT-23 package.
Are the 2N7002DW and 2N7002 electrically identical per transistor?
Yes, each MOSFET element in the 2N7002DW is based on the same 2N7002 die technology and is specified with comparable key ratings, including a 60 V drain-source voltage (VDS), a continuous drain current typically around 115 mA to 300 mA depending on test conditions, and a maximum power dissipation per element that is lower than the single 2N7002 due to the shared package thermal path.
Can the 2N7002DW replace two separate 2N7002 transistors?
In many designs, yes, provided the PCB layout is changed to the 6-pin SOT-363 footprint and the thermal and power dissipation limits of the dual package are respected. The 2N7002DW saves board space and component count, but its per-element power rating is generally lower than that of a standalone 2N7002 in SOT-23 because both elements share the same package.
What are the typical package options for the 2N7002DW and 2N7002?
The 2N7002DW is typically offered in a 6-pin SOT-363 (SC-70) surface-mount package. The 2N7002 is most commonly offered in a 3-pin SOT-23 surface-mount package, although some manufacturers also provide it in other packages such as SOT-323 or TO-92 for specific variants.
Do the 2N7002DW and 2N7002 have the same pin configuration?
No. The 2N7002 in SOT-23 has three pins: gate, source, and drain. The 2N7002DW in SOT-363 has six pins, typically arranged as two independent MOSFETs with separate gate, source, and drain pins for each element. Therefore, the pinouts are not directly compatible and require different PCB footprints.
What are the key voltage and current ratings for these devices?
Both the 2N7002DW and 2N7002 are rated for a maximum drain-source voltage (VDS) of 60 V and a maximum gate-source voltage (VGS) of ±20 V. Continuous drain current (ID) is typically specified as 115 mA to 300 mA depending on the manufacturer and test conditions, with the 2N7002DW often having a lower per-element continuous current rating due to package thermal limitations.
Are the 2N7002DW and 2N7002 interchangeable in existing designs?
They are not drop-in interchangeable because they have different package footprints and pin counts. The 2N7002DW requires a 6-pin SOT-363 land pattern, while the 2N7002 uses a 3-pin SOT-23 land pattern. Substitution requires a PCB redesign and verification of thermal performance, power dissipation, and any circuit-specific requirements.
What are the typical applications for the 2N7002DW versus the 2N7002?
The 2N7002DW is commonly used in space-constrained designs requiring two independent low-power N-channel MOSFETs, such as level shifting, load switching, and signal routing in portable electronics. The 2N7002 is widely used in general-purpose low-power switching, interfacing, and amplification where a single MOSFET is sufficient and a SOT-23 footprint is preferred.