2N7002DW vs 2N7002E-T1-E3

2N7002DW과 2N7002E-T1-E3에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002E-T1-E3 are both 60 V logic-level N-channel MOSFETs in SOT-23 packages, making the 2N7002E-T1-E3 a viable functional replacement candidate for the 2N7002DW in single-channel applications. However, the 2N7002DW is a dual-channel device, so designers must account for the difference in channel count and verify that the single MOSFET of the 2N7002E-T1-E3 can satisfy the circuit's switching requirements before substituting.

Channel Count Validation required
Drain-Source Voltage Rating High match
Package Type High match
Continuous Drain Current Validation required

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002DW 2N7002E-T1-E3
Part Status Active Active
FET Type - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V 60 V
Current - Continuous Drain(Id) @ 25°C - 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id - 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 0.6 nC @ 4.5 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 21 pF @ 5 V
Power Dissipation (Max) - 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number 2N7002 -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Current - Continuous Drain (Id) @ 25°C 115mA -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V -
Vgs(th) (Max) @ Id 2V @ 250µA -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V -
Power - Max 200mW -
Packaging Cut Tape (CT), Tape & Reel (TR) -