2N7002DW
온세미
- Lifecycle
- Active
- Stock
- 6631 PCS
- Series
- 트랜지스터-FET, MOSFET-FET, MOSFET 어레이
2N7002DW과 2N7002E-T1-E3에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.
Replacement verdict
The 2N7002DW and 2N7002E-T1-E3 are both 60 V logic-level N-channel MOSFETs in SOT-23 packages, making the 2N7002E-T1-E3 a viable functional replacement candidate for the 2N7002DW in single-channel applications. However, the 2N7002DW is a dual-channel device, so designers must account for the difference in channel count and verify that the single MOSFET of the 2N7002E-T1-E3 can satisfy the circuit's switching requirements before substituting.
온세미
실리콘 닉스
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Use manufacturer datasheets as the final authority.
| Specification | 2N7002DW | 2N7002E-T1-E3 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | - | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | - | 240mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | - | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | - | 3Ohm @ 250mA, 10V |
| Vgs(th)(Max) @ Id | - | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.6 nC @ 4.5 V |
| Vgs(Max) | - | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 21 pF @ 5 V |
| Power Dissipation (Max) | - | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | 2N7002 | - |
| Configuration | 2 N-Channel (Dual) | - |
| FET Feature | Logic Level Gate | - |
| Current - Continuous Drain (Id) @ 25°C | 115mA | - |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | - |
| Power - Max | 200mW | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |