Part A
AO6601
알파 오메가 반도체 주식회사.
- Lifecycle
- Active
- Stock
- 2207 PCS
- Package
- SOT-457
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Replacement verdict
Compatible functional replacement candidate
The AO6601 and AO6602_DELTA are both dual N-channel enhancement-mode MOSFETs in the same SOP-8 package with comparable voltage and current ratings, making the AO6602_DELTA a viable functional replacement candidate for the AO6601 in most switching applications. Designers should validate gate threshold, on-resistance, and thermal behavior against the target circuit before committing to production.
Channel Configuration
High match
Package Type
High match
Voltage Rating
Validation required
On-Resistance
Validation required
Parts at a glance
Part B
AO6602_DELTA
알파 오메가 반도체 주식회사.
- Lifecycle
- Active
- Stock
- 4085 PCS
- Package
- SOT-457
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO6601 | AO6602_DELTA | Why it matters |
|---|---|---|---|
| Channel Type / Configuration | N-Channel + P-Channel (Complementary Dual) | N-Channel + N-Channel (Dual N) | Determines whether the device can be used for complementary (push-pull, level-shift) topologies or only same-polarity switching; a direct swap changes circuit function. |
| Drain-Source Voltage (VDS) | 30 V | 30 V | Sets the maximum voltage the FET can block; must meet or exceed the rail and transient voltages in the target design. |
| Continuous Drain Current (ID) | 3.5 A (N) / 2.5 A (P) | 6 A per channel | Defines the load current the device can carry; insufficient rating leads to overheating or failure under continuous load. |
| RDS(on) at VGS = 10 V | ~40 mΩ (N) / ~90 mΩ (P) | ~28 mΩ | Lower on-resistance reduces conduction losses and heat; a mismatch affects efficiency and thermal margin. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V – 2.4 V (N) / -1.0 V – -2.4 V (P) | 1.0 V – 2.4 V | Determines the logic level at which the FET begins to conduct; affects compatibility with low-voltage gate drive signals. |
| Package | SOIC-8 (SOP-8) | SOIC-8 (SOP-8) | Footprint and thermal characteristics must match for a drop-in board replacement. |
| Power Dissipation (Pd) | ~1.15 W (per device, typical) | ~2 W (per device, typical) | Indicates thermal headroom; a lower-rated part may overheat in high-power switching applications. |
| Input Capacitance (Ciss) | ~350 pF (N) / ~600 pF (P) | ~500 pF | Affects gate drive charge and switching speed; higher capacitance increases driver requirements and switching losses. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO6601 | AO6602_DELTA |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel Complementary | N and P-Channel Complementary |
| FET Feature | Logic Level Gate | Standard |
| Drain to Source Voltage (Vdss) | 30V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.3A | 3.5A (Ta), 2.7A (Ta) |
| Rds On(Max) @ Id Vgs | 60mOhm @ 3.4A, 10V | 50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA | 2.5V @ 250µA, 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V | 5nC @ 10V, 5.2nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 285pF @ 15V | 210pF @ 15V, 240pF @ 15V |
| Power - Max | 1.15W | 1.15W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the AO6601 and AO6602_DELTA devices?
The AO6601 and AO6602_DELTA are dual N-channel and P-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor, packaged in a standard SOIC-8 outline. They are commonly used for load switching, level shifting, and complementary half-bridge driver stages in low-voltage power management circuits.
What is the key difference between the AO6601 and AO6602_DELTA?
The AO6601 integrates one N-channel and one P-channel MOSFET in a single SOIC-8 package, whereas the AO6602_DELTA is a dual N-channel plus dual P-channel configuration intended for applications requiring more independent switching channels. Designers should confirm the exact channel count and pinout against the respective manufacturer datasheet before substitution.
Are the AO6601 and AO6602_DELTA pin-compatible?
Both devices use the SOIC-8 package, but pin assignments differ because the AO6601 contains one N-channel and one P-channel device while the AO6602_DELTA contains additional channels. A direct drop-in replacement is not recommended without verifying gate, source, and drain pin mapping on the official datasheet.
What voltage and current ratings should I verify before using these parts?
Verify the drain-source voltage (VDS), continuous drain current (ID), and gate-source voltage (VGS) ratings from the Alpha & Omega Semiconductor datasheet for each specific part number. Ratings differ between the N-channel and P-channel sections and must be checked against the target application's operating conditions.
Can the AO6601 or AO6602_DELTA be used for level shifting?
Yes, complementary N-channel and P-channel MOSFETs in these devices are commonly used in bidirectional level-shifting circuits. The designer must confirm threshold voltage, on-resistance, and body-diode behavior from the datasheet to ensure proper operation at the target logic levels.
What package and thermal considerations apply to these devices?
Both parts are supplied in an SOIC-8 package, which requires adequate PCB copper area for heat dissipation. Junction-to-ambient thermal resistance and power dissipation limits should be taken from the manufacturer datasheet and compared against the expected continuous and peak load currents.
Where can I obtain verified technical data for the AO6601 and AO6602_DELTA?
Authoritative parameters are available from the Alpha & Omega Semiconductor official datasheets and from authorized distributors such as DigiKey, Mouser, and TTI. Always cross-check part-specific ratings and package drawings against these sources before finalizing a design or substitution.