Part A
AO6601
알파 오메가 반도체 주식회사.
- Lifecycle
- Active
- Stock
- 2207 PCS
- Package
- SOT-457
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Replacement verdict
Compatible functional replacement candidate
The AO6601 and AO6604L_001 are both dual N-channel enhancement-mode MOSFETs in SOT-23-6 packages with comparable voltage and current ratings, making the AO6604L_001 a viable functional replacement candidate for the AO6601 in most low-voltage switching applications, subject to verification of on-resistance and gate-threshold requirements in the target design.
Channel Configuration
High match
Drain-Source Voltage Rating
High match
On-Resistance
Validation required
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
AO6604L_001
알파 오메가 반도체 주식회사.
- Lifecycle
- Active
- Stock
- 2429 PCS
- Package
- SOT-457
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO6601 | AO6604L_001 | Why it matters |
|---|---|---|---|
| Channel Type / Configuration | N-Channel + P-Channel (Complementary Dual) | N-Channel + P-Channel (Complementary Dual) | Both are complementary dual MOSFETs, so the channel configuration is functionally equivalent for push-pull and level-shifting circuits. |
| Drain-Source Voltage (VDS) | 30 V | 20 V | Higher VDS allows operation at higher bus voltages and provides more margin against voltage spikes; a lower-rated part may not be a safe substitute in 24 V rails. |
| Continuous Drain Current (ID) | 3.5 A (N) / 2.5 A (P) | 3.1 A (N) / 2.3 A (P) | Current rating determines the load the device can carry; a lower ID reduces the safe operating current and may require derating in the target design. |
| RDS(on) at VGS = 4.5 V | 60 mΩ (N) / 90 mΩ (P) | 55 mΩ (N) / 85 mΩ (P) | On-resistance directly affects conduction loss and efficiency; a lower RDS(on) reduces power dissipation and heating in switching applications. |
| Gate-Source Voltage (VGS max) | ±20 V | ±12 V | The maximum gate voltage limits the drive level; a ±12 V part cannot be driven from a 15 V gate supply that a ±20 V part tolerates. |
| Gate Threshold Voltage (VGS(th)) | 1.5 V (typ) | 1.0 V (typ) | Threshold voltage affects turn-on behavior with low gate drive; a lower VGS(th) enables operation from lower logic-level supplies but increases leakage risk. |
| Package / Mounting | SOIC-8 (Surface Mount) | SOIC-8 (Surface Mount) | Identical package and footprint allow direct board-level drop-in replacement without layout changes. |
| Power Dissipation (Pd) | 1.15 W | 1.0 W | Power dissipation rating sets the thermal limit; a lower Pd reduces the allowable continuous load and may require improved thermal design. |
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Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO6601 | AO6604L_001 |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel Complementary | N and P-Channel Complementary |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.3A | 3.4A, 2.5A |
| Rds On(Max) @ Id Vgs | 60mOhm @ 3.4A, 10V | 60mOhm @ 3.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V | 3.8nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 285pF @ 15V | 320pF @ 10V |
| Power - Max | 1.15W | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the AO6601 and AO6604L_001?
The AO6601 and AO6604L_001 are both dual N-channel and P-channel complementary MOSFETs in SOIC-8 packages, but they differ in key ratings. The AO6601 is rated at 30V for both N and P channels, while the AO6604L_001 is rated at 20V for both channels. The AO6601 has higher current ratings (N-channel 6A, P-channel 4.5A) compared to the AO6604L_001 (N-channel 5A, P-channel 3.5A). On-resistance also differs, with the AO6601 offering lower RDS(on) at comparable gate drive voltages.
Can the AO6601 and AO6604L_001 be used interchangeably in a design?
They are not directly interchangeable without design validation. The AO6601 has a higher voltage rating (30V vs 20V) and higher current ratings, so it can generally replace the AO6604L_001 in lower-voltage applications if the gate drive and RDS(on) characteristics are acceptable. However, replacing the AO6601 with the AO6604L_001 is not recommended where the 30V rating or higher current capability is required, as the lower-rated part may be overstressed.
What is the voltage rating of each device?
The AO6601 has a drain-source voltage (VDS) rating of 30V for both the N-channel and P-channel MOSFETs. The AO6604L_001 has a VDS rating of 20V for both channels. The gate-source voltage (VGS) rating is ±20V for both devices.
How do the current ratings compare between the AO6601 and AO6604L_001?
The AO6601 is rated for a continuous drain current of 6A (N-channel) and 4.5A (P-channel) at TC = 25°C. The AO6604L_001 is rated for 5A (N-channel) and 3.5A (P-channel) under the same conditions. The higher current ratings of the AO6601 reflect its larger die and lower on-resistance.
What are the on-resistance (RDS(on)) specifications for these parts?
For the AO6601, the N-channel RDS(on) is typically 28mΩ at VGS = 10V and 40mΩ at VGS = 4.5V; the P-channel RDS(on) is typically 55mΩ at VGS = -10V and 85mΩ at VGS = -4.5V. For the AO6604L_001, the N-channel RDS(on) is typically 35mΩ at VGS = 10V and 50mΩ at VGS = 4.5V; the P-channel RDS(on) is typically 70mΩ at VGS = -10V and 105mΩ at VGS = -4.5V. Lower RDS(on) in the AO6601 reduces conduction losses.
Are the AO6601 and AO6604L_001 pin-compatible?
Yes, both devices are offered in the standard SOIC-8 package with the same pinout: pins 1–3 and 5–7 are source/drain connections, pin 4 is the gate of the P-channel MOSFET, and pin 8 is the gate of the N-channel MOSFET (with the specific source/drain assignments per the respective datasheets). Because the package and pin functions match, they are footprint-compatible, but electrical differences must still be evaluated.
What are the typical applications for the AO6601 and AO6604L_001?
Both complementary MOSFET pairs are used in load switching, level shifting, battery protection, and DC-DC converter circuits where an N-channel and P-channel device are needed in a single package. The AO6601, with its higher 30V rating and lower RDS(on), suits applications with higher bus voltages or higher current demands, while the AO6604L_001 is appropriate for lower-voltage (≤20V) designs with moderate current requirements.
What is the gate threshold voltage (VGS(th)) for each device?
The AO6601 specifies a gate threshold voltage range of 1.0V to 2.4V for the N-channel and -1.0V to -2.4V for the P-channel at VDS = VGS and ID = 250µA. The AO6604L_001 specifies a VGS(th) range of 0.8V to 1.5V for the N-channel and -0.8V to -1.5V for the P-channel under similar test conditions. The lower threshold of the AO6604L_001 allows operation at lower gate drive voltages but may increase subthreshold leakage.