Part A
IRF9389TRPBF
인피니티 테크놀로지
- Lifecycle
- Active
- Stock
- 2112 PCS
- Package
- SO-8
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Parts at a glance
Part B
IRF9388TRPBF
인피니티 테크놀로지
- Lifecycle
- Active
- Stock
- 1405 PCS
- Package
- SO-8
- Series
- 트랜지스터 -FET, MOSFET - 싱글
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | IRF9389TRPBF | IRF9388TRPBF |
|---|---|---|
| Series | HEXFET® | HEXFET® |
| Part Status | Active | Active |
| FET Type | N and P-Channel | P-Channel |
| Technology | - | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 6.8A, 4.6A | 12A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | - | 10V, 20V |
| Rds On(Max) @ Id Vgs | 27mOhm @ 6.8A, 10V | 8.5mOhm @ 12A, 20V |
| Vgs(th)(Max) @ Id | 2.3V @ 10µA | 2.4V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 14nC @ 10V | 52 nC @ 10 V |
| Vgs(Max) | - | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 398pF @ 15V | 1680 pF @ 25 V |
| Power Dissipation (Max) | - | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| FET Feature | Logic Level Gate | - |
| Power - Max | 2W | - |