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CSD25485F5
+BOMMOSFET P-CH 20V 3.2A 3PICOSTAR
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제조업체텍사스 인스트루먼트(주)
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제조업체 부품 #CSD25485F5
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재고3059
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | FemtoFET™ |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 8V |
| Rds On(Max) @ Id Vgs | 35mOhm @ 900mA, 8V |
| Vgs(th)(Max) @ Id | 1.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.5 nC @ 4.5 V |
| Vgs(Max) | -12V |
| Input Capacitance(Ciss)(Max) @ Vds | 533 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PICOSTAR |
개요
Description
### Key Features:
- Low On-Resistance (RDS(on)): 4.8 mΩ (max) at VGS = 4.5 V
- Low Gate Charge (QG): 8.5 nC (typ) for fast switching
- Small Footprint: 1.6 mm × 1.6 mm SON-5 package
- Low Voltage Operation: VDS = 30 V, VGS = ±20 V
### Applications:
- Synchronous Buck Converters
- Battery-Powered Devices
- Point-of-Load (POL) Converters
This MOSFET is optimized for high efficiency and thermal performance, making it ideal for space-constrained, high-current designs.
Equivalent
1. Si2301DS - by Vishay
2. IRLML6402 - by Infineon
3. PMV20XN - by Nexperia
4. FDN5618P - by ON Semiconductor
These alternatives have similar electrical characteristics but may have differences in packaging or specific performance parameters. Always verify compatibility with your application requirements before substituting.
Features
1. P-Channel MOSFET: This device is a P-channel MOSFET, which means it controls the flow of current using positive voltage applied to the gate terminal relative to the source.
2. Low On-Resistance: It typically offers low on-resistance, reducing power loss and heat generation, which is crucial for efficient power management.
3. Efficient Switching: The MOSFET is designed for fast switching, making it suitable for applications requiring rapid on-and-off cycles.
4. Compact Package: It is available in a small SOT-23 package, ideal for space-constrained applications and facilitating easy integration into compact circuit boards.
5. Thermal Performance: Good thermal performance ensures reliability and stability under high-load conditions.
6. Voltage and Current Ratings: It is rated for specific voltage and current limits that make it suitable for low to medium-power applications.
7. Applications: The CSD25485F5 is commonly used in load switching, power management, and other electronic circuits requiring efficient control of power flow.
Pinout
Pin Functions:
1. Gate 1 (G1) – Controls the first N-channel MOSFET.
2. Source 1 (S1) – Source terminal for the first MOSFET.
3. Drain (D) – Common drain for both MOSFETs.
4. Gate 2 (G2) – Controls the second N-channel MOSFET.
5. Source 2 (S2) – Source terminal for the second MOSFET.
This device is optimized for low-voltage, high-efficiency power switching in applications like load switches and DC-DC converters.