FDG6303N

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FDG6303N

+BOM

MOSFET 2N-CH 25V 0.5A SC88

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사양

속성 가치
Part Status Obsolete
Base Product Number FDG6303
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 500mA
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6)
Packaging Cut Tape (CT), Tape & Reel (TR)

개요

Description

The FDG6303N is an N-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 30mΩ at 4.5V gate drive, reducing power loss.
- Fast Switching: Optimized for high-speed operations like DC-DC converters or load switches.
- Low Gate Charge (Qg): Enhances efficiency in high-frequency circuits.
- Compact Package: Available in SOT-23-3, ideal for space-constrained designs.
Applications:
- Power management (e.g., battery protection, motor control).
- Portable electronics (e.g., smartphones, tablets).
- LED drivers and low-power converters.
Voltage Ratings:
- Drain-Source Voltage (VDS): 30V.
- Gate-Source Voltage (VGS): ±12V.
The FDG6303N balances performance and cost, making it suitable for energy-sensitive designs. For detailed specs, refer to the datasheet.

Equivalent

The FDG6303N is a dual N-channel MOSFET. Equivalent or similar products include:
- FDG6303P (P-channel counterpart)
- SI2303DS (Similar specs, Vishay)
- DMN3010LSS (Diodes Inc.)
- BSS138 (Lower current, common alternative)
- 2N7002 (General-purpose alternative)
Check datasheets for exact compatibility in your circuit.

Features

The FDG6303N is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source, VDS)
- Current Rating: 5.7A (Continuous Drain, ID)
- Low On-Resistance: 28mΩ (at VGS = 10V)
- Fast Switching: Low gate charge (QG = 8.3nC) for efficient performance
- Low Threshold Voltage: VGS(th) = 1V (min) for easy drive
- Power Dissipation: 2.5W (TA = 25°C)
- Package: SOT-23 (Compact surface-mount)
Ideal for power management, load switching, and DC-DC conversion in portable electronics.

Pinout

The FDG6303N is a dual N-channel MOSFET in an SOT-363 (SC-70-6) package with 6 pins.
### Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal of the first MOSFET.
3. Pin 3 (Drain 1): Drain terminal of the first MOSFET.
4. Pin 4 (Gate 2): Controls the second MOSFET.
5. Pin 5 (Source 2): Source terminal of the second MOSFET.
6. Pin 6 (Drain 2): Drain terminal of the second MOSFET.
### Key Features:
- Low threshold voltage (suitable for 3V/5V logic).
- Low on-resistance (RDS(on)) for efficient switching.
- Commonly used in load switching, power management, and signal routing.
The FDG6303N is ideal for space-constrained applications due to its small footprint.

Application

The FDG6303N is an N-channel MOSFET commonly used in:
1. Power Management – Switching regulators, DC-DC converters.
2. Load Switching – Controlling power in portable devices.
3. Motor Control – Driving small motors in consumer electronics.
4. Battery Protection – Overcurrent/overvoltage protection circuits.
5. LED Drivers – Efficient power control for lighting systems.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, low-voltage (<30V) applications.

Package

The FDG6303N is a dual N-channel MOSFET available in an SO-8 (Small Outline 8-pin) package. It is surface-mount, compact, and suitable for high-efficiency power applications. The package type ensures good thermal performance and space-saving on PCBs.

Frequently Asked Questions


Q: What is the maximum drain-source voltage for the FDG6303N?
A: The FDG6303N has a maximum drain-source voltage (Vdss) of 25V, suitable for low-voltage applications.


Q: Can this dual MOSFET be used for logic-level gate drive?
A: Yes, it features a Logic Level Gate, with a maximum threshold voltage (Vgs(th)) of 1.5V at 250μA, allowing direct drive from 3.3V or 5V logic.


Q: What is the maximum continuous drain current at 25°C?
A: The continuous drain current (Id) is rated at 500mA at 25°C for each N-Channel MOSFET.


Q: What is the on-resistance at typical operating conditions?
A: The Rds(on) is 450mOhm maximum at Vgs=4.5V and Id=500mA, ensuring efficient low-power switching.


Q: What package type does this component use for mounting?
A: It uses a surface-mount 6-TSSOP (SC-88, SOT-363) package, with supplier device package SC-88 (SC-70-6).


Q: Is the FDG6303N suitable for high-temperature environments?
A: Yes, its operating temperature range is -55°C to 150°C (junction), making it robust for industrial and automotive-grade designs.


Q: What is the typical input capacitance for switching loss calculations?
A: The input capacitance (Ciss) is 50pF maximum at Vds=10V, enabling fast switching in low-power circuits.