FDG6316P

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FDG6316P

+BOM

MOSFET 2P-CH 12V 0.7A SC88

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  • 제조업체 부품 #FDG6316P

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사양

속성 가치
Series PowerTrench®
Part Status Obsolete
Base Product Number FDG6316
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 700mA
Rds On (Max) @ Id, Vgs 270mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 6V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6)
Packaging Cut Tape (CT), Tape & Reel (TR)

개요

Description

The FDG6316P is an N-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Low on-resistance (RDS(on)): Enhances power efficiency.
- Compact package (TSOT-23-6): Ideal for space-constrained designs.
- Low gate charge (Qg): Enables fast switching, reducing losses.
- Voltage rating: 30V (drain-to-source), suitable for 12V/24V systems.
Common uses include power management in portable devices, DC-DC converters, and load switching. Its small size and performance make it popular in battery-powered and automotive electronics.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FDG6316P (Fairchild/ON Semiconductor) include:
- SI2316DS (Vishay)
- DMG3416U (Diodes Inc.)
- NDS331N (ON Semiconductor)
- BSS138 (Infineon/NXP) – Slightly different specs but often used as a substitute.
These are N-channel MOSFETs with similar voltage/current ratings (20V, 1.3A–2A). Verify pinout and specs for exact compatibility.

Features

The FDG6316P is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source, VDSS)
- Current Rating: 5.3A (Continuous Drain, ID)
- Low On-Resistance: 50mΩ (max at VGS = 10V)
- Fast Switching: Low gate charge (QG ~ 6.5nC) for efficient performance
- Low Threshold Voltage: VGS(th)- Power Dissipation: 2W (TA = 25°C)
- Package: SOT-23 (compact, surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Designed for efficiency in space-constrained designs, it suits low-voltage, high-speed switching needs.

Application

The FDG6316P is an N-channel MOSFET commonly used in:
1. Power Management – Switching regulators, DC-DC converters.
2. Load Switching – Controlling power to peripherals in portable devices.
3. Motor Control – Driving small motors in consumer electronics.
4. Battery Protection – Overcurrent/overvoltage protection circuits.
5. LED Drivers – Efficient current control for lighting systems.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, low-voltage (<20V) applications.

Package

The FDG6316P is a P-channel MOSFET available in a TSOT-23-6 package. This compact surface-mount package is suitable for space-constrained applications, offering efficient power management with a small footprint. Key features include low on-resistance and fast switching, ideal for portable electronics and power circuits.

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