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FDMC8030
+BOMMOSFET 2N-CH 40V 12A 8PWR33
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제조업체온세미
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제조업체 부품 #FDMC8030
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재고3544
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Base Product Number | FDMC80 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1975pF @ 20V |
| Power - Max | 800mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 8-PowerWDFN |
| Supplier Device Package | 8-Power33 (3x3) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
The course might also delve into the mathematical models and theories behind derivatives, such as the Black-Scholes model for options pricing, and examine the regulatory environment governing these markets. Students could engage with case studies and simulations to understand the practical challenges and strategies involved in trading and managing financial derivatives. The course is likely designed for those with a background in finance or economics and could be part of a graduate program in finance or a related field.
This brief overview provides a snapshot of what 'Introduction to FDMC8030' might cover, though specific content can vary depending on the institution offering the course.
Equivalent
1. NXP PSMN3R9-30YLD
2. Infineon IPB072N15N3 G
3. STMicroelectronics STL110N10F7
4. Vishay SiR880DP
These equivalents should have similar voltage ratings, current handling, and package type. Always verify the specifications to ensure compatibility with your application.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, which is commonly used for switching applications.
2. Low On-Resistance: It features low on-state resistance, which ensures efficient power conduction and minimal energy loss.
3. High-Speed Switching: The MOSFET supports high-speed switching, making it suitable for high-frequency applications.
4. Small Form Factor: It comes in a compact package, which is ideal for space-constrained applications.
5. Enhanced Thermal Performance: The device is designed to handle thermal stress effectively, providing reliable performance under varying temperature conditions.
6. RoHS Compliance: The FDMC8030 is compliant with Restriction of Hazardous Substances (RoHS) standards, making it environmentally friendly.
These features make the FDMC8030 suitable for use in various applications, including DC-DC converters, power management in portable devices, and other electronic circuits where efficient power switching is essential.
Pinout
1. Drain (D): The drain terminal is connected to the load and is responsible for carrying the output current. In the FDMC8030, multiple pins may serve as the drain connection to facilitate higher current handling.
2. Gate (G): The gate terminal controls the MOSFET's conduction state. By applying a voltage to the gate, the MOSFET can be turned on or off.
3. Source (S): The source terminal is typically connected to the ground or the return path of the circuit. It is the terminal through which the current exits the MOSFET when it is conducting.
The exact pinout may vary slightly depending on the specific variant or packaging of the FDMC8030, so it's always advisable to refer to the manufacturer's datasheet for precise pin configuration and other specifications.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage (Vdss) rating for the FDMC8030?
A: The FDMC8030 is rated for a maximum drain-to-source voltage of 40V, making it suitable for 24V or 36V bus systems.
Q: Can this dual MOSFET be driven by a 3.3V logic signal?
A: Yes, its Logic Level Gate feature ensures it can be fully enhanced with standard 3.3V or 5V logic, having a max threshold of 2.8V.
Q: What is the maximum continuous drain current at 25°C?
A: It can handle up to 12A continuous drain current per channel at 25°C when properly heatsinked.
Q: Does this component support surface mount assembly?
A: Yes, it comes in an 8-PowerWDFN surface mount package, specifically the 8-Power33 (3x3mm) footprint.
Q: What is the typical application for a dual N-channel MOSFET like this?
A: It is ideal for synchronous buck converters, dual-load switching, or bridge circuits in compact power management designs.
Q: How does the Rds(on) value affect power efficiency?
A: With a low Rds(on) of 10mOhm at 12A/10V, it minimizes conduction losses, improving overall power conversion efficiency.