이미지는 참조용입니다.

IKP20N60T

Name: IKP20N60T
Rating: 4.8 (15 reviews)

+BOM

IKP20N60 - DISCRETE IGBT WITH AN

제조업체인피니티 테크놀로지
제조업체 부품 #IKP20N60T
데이터시트 IKP20N60T DataSheet
패키지 TO-220-3
재고7444

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성	가치
Package	Bulk
Series	TrenchStop™
ProductStatus	Active
IGBTType	Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max)	600 V
Current-Collector(Ic)(Max)	41 A
Current-CollectorPulsed(Icm)	60 A
Vce(on)(Max)@VgeIc	2.05V @ 15V, 20A
Power-Max	166 W
SwitchingEnergy	310µJ (on), 460µJ (off)
InputType	Standard
GateCharge	120 nC
Td(on/off)@25°C	18ns/199ns
TestCondition	400V, 20A, 12Ohm, 15V
ReverseRecoveryTime(trr)	41 ns
OperatingTemperature	-40°C ~ 175°C (TJ)
MountingType	Through Hole
Package/Case	TO-220-3

개요

Description

The IKP20N60T is a 600V, 20A N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency switching applications. Key features include:
- Low V_CE(sat) (1.85V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, suitable for inverters, motor drives, and SMPS.
- High current capability (20A continuous, 40A pulsed).
- Built-in fast recovery diode for improved reliability in inductive loads.
- TO-220 package for easy mounting and heat dissipation.
Applications include power supplies, welding equipment, and industrial motor control. Its robust design ensures efficient performance in high-voltage, high-frequency circuits.

Features

The IKP20N60T is a 600V, 20A N-channel IGBT with the following key features:
- Voltage Rating: 600V (V_CES)
- Current Rating: 20A (I_C @25°C)
- Low V_CE(sat): 1.85V (typical) for reduced conduction losses
- Fast Switching: Suitable for high-frequency applications
- High Input Impedance: Easy drive with low gate current
- Built-in Fast Recovery Diode: Improves efficiency in inductive load switching
- Low Thermal Resistance: Enhances heat dissipation
- TO-220 Package: Standard mounting option
Commonly used in SMPS, motor drives, and inverters due to its efficiency and robustness.

Pinout

The IKP20N60T is a 600V, 20A N-channel IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connected to load).
3. Emitter (E) – Ground/return path.
Key Features:
- 600V breakdown voltage
- 20A continuous current
- Low saturation voltage (V_CE(sat))
- Fast switching for power applications (e.g., inverters, motor drives).
Designed for efficiency in high-power circuits.

Manufacturer

The IKP20N60T is a 600V, 20A IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies, a leading German semiconductor company.
Infineon specializes in power electronics, automotive systems, and IoT solutions, known for high-performance components like MOSFETs, IGBTs, and microcontrollers. The company serves industries such as automotive, industrial, and renewable energy, emphasizing efficiency and innovation.
The IKP20N60T is part of Infineon’s TRENCHSTOP™ series, designed for fast switching and low losses in applications like motor drives and power supplies.

Application

The IKP20N60T, a 600V/20A N-channel IGBT, is commonly used in:
1. Switching Power Supplies – Efficient power conversion in SMPS.
2. Motor Drives – Controls motors in appliances and industrial systems.
3. Inverters – Converts DC to AC in solar inverters and UPS.
4. Welding Equipment – Provides high-current switching.
5. Induction Heating – Used in cooktops and industrial heaters.
Its fast switching and low saturation voltage make it suitable for high-efficiency applications.

Package

The IKP20N60T is a 600V, 20A N-channel IGBT in a TO-220 package. This through-hole package is widely used for power applications due to its robust thermal and electrical performance, making it suitable for switching and amplification in industrial and consumer electronics.