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IRG4PF50WPBF
+BOMIGBT 900V 51A 200W TO247AC
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRG4PF50WPBF
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데이터시트 IRG4PF50WPBF DataSheet
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패키지 TO-247-3
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사양
| 속성 | 가치 |
| Package | Tube |
| ProductStatus | Obsolete |
| Voltage-CollectorEmitterBreakdown(Max) | 900 V |
| Current-Collector(Ic)(Max) | 51 A |
| Current-CollectorPulsed(Icm) | 204 A |
| Vce(on)(Max)@VgeIc | 2.7V @ 15V, 28A |
| Power-Max | 200 W |
| SwitchingEnergy | 190µJ (on), 1.06mJ (off) |
| InputType | Standard |
| GateCharge | 160 nC |
| Td(on/off)@25°C | 29ns/110ns |
| TestCondition | 720V, 28A, 5Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
개요
Equivalent
- IRG4PC50WPBF (600V, 55A)
- IRG4PC50UDPBF (600V, 55A, Ultrafast)
- STGW40H60DF (600V, 40A, STMicro)
- FGA40N60SMD (600V, 40A, Fairchild/ON Semi)
- HGTG40N60B3 (600V, 75A, Fairchild/ON Semi)
Check datasheets for exact specs and pin compatibility.
Features
- Voltage Rating: 500V (VCES)
- Current Rating: 44A (IC @ 25°C)
- Low VCE(sat): 1.65V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: High short-circuit withstand capability (10µs)
- Temperature Range: -55°C to +150°C (Tj)
- Package: TO-247AC (isolated tab for easier mounting)
- Applications: Motor drives, inverters, UPS, and welding equipment
It combines low switching losses with high efficiency, making it suitable for power electronics.
Manufacturer
The IRG4PF50WPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications.