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SQJQ160E-T1_GE3
+BOMAUTOMOTIVE N-CHANNEL 60 V (D-S)
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제조업체실리콘 닉스
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제조업체 부품 #SQJQ160E-T1_GE3
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사양
| 속성 | 가치 |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 602A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 0.85mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 16070 pF @ 25 V |
| Power Dissipation (Max) | 600W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Package / Case | PowerPAK® 8 x 8 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
